San' an photoelectric memorabilia

20 1 1 In June, 2006, the "Annual Selection of LED Industry in China (20 10)" was sponsored by China Electronic News, LED Devices Branch of China Optical Association and LED Display Application Branch of China Optical Association, covering all industrial fields such as LED epitaxy, chips, packaging devices and application engineering. With its leading innovation level, strong technical force, rapid development speed and good performance in 20 10, Sanan Optoelectronics won the "Best Growing Enterprise Award in China LED Industry in 20 10".

20 1 1 April, the project "Ultra-high brightness LED chip for TFT-LCD backlight" won the first prize of Xiamen Science and Technology Progress in 20 10. At the same time, the product "S-23ABMUP LED Chip for Backlight" won the first prize of 20 10 Xiamen Excellent New Product Award.

At the invitation of Xiamen Municipal Government, Xiamen Trade Development Bureau and Xiamen Commercial Federation, Sanan Optoelectronics participated in the 7th China-ASEAN Expo from 10 to 19 to 10.

20 10 On September 27th, 20 10 Sanan Optoelectronic New Product Promotion Conference and Press Conference was successfully held in Kempinski Hotel, Shenzhen. This promotion has aroused widespread concern in the industry, with more than 120 customer representatives participating.

20 10 65438+ 10: Anhui sanan photoelectric co., ltd was established.

June 2009: 5438+065438+1October: The company's "RS-B 1 ultra-high brightness power red LED chip" passed the expert appraisal of new products and was recognized as the first in China, with its main performance reaching the international level.

June 2009165438+1October: Our project "Development and Industrialization of High Brightness and High Power White LED Chip for Semiconductor Lighting" won the second prize of Xiamen Science and Technology Award.

June 2009 5438+065438+1October 65438+March: Our power red chip passed the new product appraisal.

September 2009: Our company was registered with TS 16949: 2002 certification.

August 2009: The project "R&D and Semiconductor Lighting Device Industrialization" undertaken by our company was listed as the key support project of the Information Industry Development Fund in 2009 by the Ministry of Information Industry.

March 2009: The National Development and Reform Commission's special project "Power Semiconductor Full Color Chip Industrialization" undertaken by our company in 2006 passed the acceptance test.

February, 2009 12: Our leading product "S-RGB07 Full Color Doppler High Brightness LED Chip" won the first prize of Fujian Excellent New Product.

June 5438+February 2008: Tianjin Sanan Optoelectronic Co., Ltd. was established.

June 5438+February 8, 2008: The project of "Industrialization of Ultra-high Brightness LED Chip for TFT-LED Backlight" undertaken by our company was included in the fourth batch of high-tech industry development project plan of industrial technology research and development funds in 2008 by the National Development and Reform Commission.

June 2008: 5438+065438+ 10: The project "R&D and industrialization of ultra-high brightness semiconductor red light emitting diode (LED) chip for LCD backlight" undertaken by our company was included in the key support project of the Information Industry Development Fund in 2008 by the Ministry of Information Industry.

June 5438 +2008 10: the company's technology center won the title of "national enterprise technology center".

August 2008: Obtained ISO14001:2004+0: 2004 environmental management system certification.

July 2008: The company was successfully listed in the domestic A-share market.

June 2008 5438+ 10: Our company was awarded the honorary title of "Top Ten Industrial Enterprises in Xiamen in 2007" by Xiamen Municipal People's Government.

June 2007: 5438+065438+ 10: Our product "S-RGB 07 full color ultrasound high brightness (red, orange, yellow, blue and green) LED chip" passed the expert appraisal of new products and technologies organized by Xiamen Economic Development Bureau, and the appraisal conclusion was that "substrate transfer red light power LED" was the first in China, which filled the domestic blank.

June 2007 5438+ 10: Our company was awarded the title of "National High-tech Industrialization Demonstration Project" by the National Development and Reform Commission.

March 2007: Japanese scholar Dr. Kazuhiro Okawa was hired as our technical consultant.

June 5438+February, 2006: The project "100lm/W power white LED manufacturing technology" undertaken by the company was determined as the national high-tech research and development plan (863 plan) by the Ministry of Science and Technology.

165438+2006 10: the project of "full-color power semiconductor chip industrialization" undertaken by the company was listed as "the national special project of technological progress and industrial upgrading of information industry enterprises in 2006" by the National Development and Reform Commission.

July 2006: The project of "Power High Brightness LED Chip and Flip Chip Technology" passed the expert appraisal, and the appraisal result showed that the industrialization technical index reached the domestic leading level.

May 2006: The company was officially approved by the Ministry of Personnel to set up a postdoctoral research center to carry out postdoctoral research.

April 2006: The project "Development and Industrialization of GaN-based LED Epitaxial Wafers and Chips" passed the expert appraisal. The appraisal results show that the industrialization scale has reached the largest in China, the quality is stable and reliable, and the technical indicators have reached the leading level in China.

June 5438+February, 2005: The "Semiconductor Lighting Industrialization Technology Development", a key national scientific and technological project during the Tenth Five-Year Plan, passed the expert acceptance organized by the Ministry of Science and Technology.

June 2005: 5438+065438+ 10: The company's project "Preparation of GaN-based LED epitaxial wafers and devices" was recognized as a high-tech achievement transformation project in Xiamen.

June 2005: The company's "Development and Industrialization of High Brightness and High Power White Diode Chip for Semiconductor Lighting" was included in the 2005 National Torch Plan by the Ministry of Science and Technology.

March 2005: The company's "Development and Industrialization of High Brightness and High Power White Diode Chip for Semiconductor Lighting" was included in the top ten key investment projects in Fujian Province in 2005.

June 2004165438+1October: The project "Development and Industrialization of High Brightness and High Power White LED Chip for Semiconductor Lighting" was listed as the key support project of the Information Industry Fund by the Ministry of Information Industry in 2005.

September 2004: The company was honored as the vice chairman of China Optoelectronic Devices Association.

August 2004: The company's technology center was awarded the title of "provincial enterprise technology center" by Fujian Economic and Trade Commission.

August, 2004: Multi-junction composite solar cell passed the test and application of Shanghai Space Power Research Institute of China Aviation Science and Technology Group, filling the domestic blank.

February 2004: The company was recognized as a key high-tech enterprise in Xiamen.

June 5438 +20031October: The National Semiconductor Lighting Industry Alliance awarded the company the title of "Leading Enterprise in Semiconductor Lighting Engineering".

June 5, 2003+10: At the 14th National Invention Exhibition, the company won the silver award for invention, the bronze award for the fabrication of N electrode of GaN LED chip and the fabrication of LED epitaxial structure.

September 2003: The company developed LED chips with independent intellectual property rights in China, breaking the history of all LED chips imported in the past.

September 2003: The company's technology center was awarded the title of "Municipal Enterprise Technology Center".

April 2003: The project "Preparation of GaN-based light-emitting diode epitaxial wafers and devices" undertaken by the company was included in the special demonstration project of high-tech industrialization of optoelectronics and new components in 2003 by the National Development and Reform Commission.

February 2003: Obtained ISO900 1:2000: 2000 quality management system certification.

June 2003 5438+ 10: The company passed the appraisal of scientific and technological achievements of full color ultrasound high brightness LED chips and became the first manufacturer in China to realize full color ultrasound high brightness LED chips.

September 2002: The company's first epitaxial film was successfully released.

June 5438+February 2000: The company was recognized as a high-tech enterprise in Xiamen.

The Construction Process of Sanan Optoelectronic 4 Billion Project

On 201March 15, Sanan Optoelectronics announced that it decided to terminate the company's public offering of A shares.

According to the announcement, due to changes in the market environment, combined with the company's situation, it was decided to terminate the company's public offering of A shares through consultation with the sponsor institution Ping An Securities, and applied to the CSRC to withdraw the application documents for the company's public offering of A shares.

However, in the announcement, Sanan Optoelectronics did not mention the specific content of this issuance plan, let alone the investment projects of this fundraising plan.

According to the data of China Industry Insight Network, on May 6, 20 1 1, Sanan Optoelectronics announced that it planned to publicly issue no more than 2 10/00000 A shares, and the total amount of funds raised did not exceed 8 billion yuan (including the issuance fee), all of which were used for Wuhu Optoelectronics Industrialization (Phase II) project of Anhui Sanan Optoelectronics Co., Ltd. and LED application industrialization project of Anhui Sanan Optoelectronics Co., Ltd. Among them, Wuhu Phase II is 5 billion yuan.

Three months later, Sanan Optoelectronics announced again that according to the feedback from the securities regulatory authorities, the total amount of the above-mentioned additional issuance was reduced to no more than 6.3 billion yuan, and the funds raised for the second phase of Wuhu were also reduced to 4 billion yuan. However, the issuance plan has not made substantial progress.

The effect of expansion has yet to be tested by the market.

Compared with two years ago, the LED upstream industry where Sanan Optoelectronics is located is more and more surplus, and its profit is declining. Some insiders speculate that Sanan Optoelectronics may have voluntarily given up raising funds and slowed down the launch of new projects.

However, Wang Qing denied the above speculation in the interview, saying that there is still a lot of room in the market. However, Wang Qing did not give a positive answer to the impact of the grounding of Wuhu Phase II on the company, saying that the company's performance would be reflected in the financial report.

The 20 12 annual report of sanan optoelectronics shows that the company achieved revenue of 3.363 billion yuan in 20 12, a substantial increase of 92.48% over the previous year. The net profit was 86,543.8 billion yuan, down 65,438+03.47% from the previous year. In addition, the gross profit margin of its main business LED was 25.3 1%, down 14.36% year-on-year.

According to its annual report, MOCVD equipment purchased by Wuhu Optoelectronic Industrialization (Phase I) Project of Anhui Sanan Optoelectronic Co., Ltd. (hereinafter referred to as Wuhu Phase I) has been put into production. Although certain economic benefits have been achieved, it will take a long time to reach full production due to the gradual production of most equipment in 20 12 years, waiting for the full release of production capacity and the full play of scale effect. The net profit of Sanan Optoelectronics 20 13 in the first quarter decreased 18.77% year-on-year.

Zhao Fei said that Sanan Optoelectronics has considerable strength in the field of domestic LED epitaxial wafers, but now there is overcapacity, and blind expansion may hide risks.

The above-mentioned insiders said that the production capacity gradually released in Wuhu Phase I will further increase its contribution to the future performance of Sanan Optoelectronics. After tasting the sweetness, Sanan Optoelectronics' desire for Wuhu Phase II is also reasonable.